Plasma diagnostic approach for the low-temperature deposition of silicon quantum dots using dual frequency PECVD
| العنوان: | Plasma diagnostic approach for the low-temperature deposition of silicon quantum dots using dual frequency PECVD |
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| المؤلفون: | Jeon G. Han, Bibhuti Bhusan Sahu, Jong-Hyeong Lee, Masaharu Shiratani, Yongyi Yin |
| المصدر: | Journal of Physics D: Applied Physics. 49:395203 |
| بيانات النشر: | IOP Publishing, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Acoustics and Ultrasonics, Silicon, Plasma parameters, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Quantum dot, Plasma-enhanced chemical vapor deposition, 0103 physical sciences, Deposition (phase transition), Plasma diagnostics, 0210 nano-technology, Plasma processing |
| الوصف: | Although studies of silicon (Si) quantum dots (QDs) were started just a few years ago, progress is noteworthy concerning unique film properties and their potential application for devices. In particular, relating to the Si QD process optimization, it is essential to control the deposition environment by studying the role of plasma parameters and atomic and molecular species in the process plasmas. In this work, we report on advanced material processes for the low-temperature deposition of Si QDs by utilizing radio frequency and ultrahigh frequency dual frequency (DF) plasma enhanced chemical vapor deposition (PECVD) method. DF PECVD can generate a very high plasma density in the range ~9 × 1010 cm−3 to 3.2 × 1011 cm−3 at a very low electron temperature (T e) ~ 1.5 to 2.4 eV. The PECVD processes, using a reactive mixture of H2/SiH4/NH3 gases, are carefully studied to investigate the operating regime and to optimize the deposition parameters by utilizing different plasma diagnostic tools. The analysis reveals that a higher ion flux at a higher plasma density on the substrate is conducive to enhancing the overall crystallinity of the deposited film. Along with high-density plasmas, a high concentration of atomic H and N is simultaneously essential for the high growth rate deposition of Si QDs. Numerous plasma diagnostics methods and film analysis tools are used to correlate the effect of plasma- and atomic-radical parameters on the structural and chemical properties of the deposited Si QD films prepared in the reactive mixtures of H2/SiH4/NH3 at various pressures. |
| تدمد: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/49/39/395203 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::e37695b42d28e5b245f857b533510573 https://doi.org/10.1088/0022-3727/49/39/395203 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........e37695b42d28e5b245f857b533510573 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13616463 00223727 |
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| DOI: | 10.1088/0022-3727/49/39/395203 |