On the effect of the electron distribution in the near-contact region and asymmetry of the resonant-tunneling diode structure on the high-frequency response and the possibility of detecting the quantum amplification mode in an external high-frequency electric field

التفاصيل البيبلوغرافية
العنوان: On the effect of the electron distribution in the near-contact region and asymmetry of the resonant-tunneling diode structure on the high-frequency response and the possibility of detecting the quantum amplification mode in an external high-frequency electric field
المؤلفون: V. Knap, Nina Dyakonova, V. A. Chuenkov, V. S. Syzranov, O. A. Klimenko, S. A. Savinov, V. N. Murzin, Yu. A. Mityagin
المصدر: Bulletin of the Lebedev Physics Institute. 36:21-28
بيانات النشر: Allerton Press, 2009.
سنة النشر: 2009
مصطلحات موضوعية: Physics, Frequency response, Condensed matter physics, business.industry, Resonant-tunneling diode, Molecular physics, Electronic, Optical and Magnetic Materials, symbols.namesake, Semiconductor, Electric field, symbols, Fermi–Dirac statistics, business, Microwave, Common emitter, Diode
الوصف: The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. The high-frequency response in structures with symmetric and asymmetric barriers was analyzed by numerical simulation methods. The effect of the Fermi distribution of carriers in the near-contact region was studied. It was shown that asymmetric structures with decreased impurity concentrations (1017 cm−3) in the emitter region are optimum from the viewpoint of experimental observation of the quantum amplification mode.
تدمد: 1934-838X
1068-3356
DOI: 10.3103/s1068335609010047
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::dd242296f8f5c4456e33a0761aa2e7db
https://doi.org/10.3103/s1068335609010047
Rights: CLOSED
رقم الانضمام: edsair.doi...........dd242296f8f5c4456e33a0761aa2e7db
قاعدة البيانات: OpenAIRE
الوصف
تدمد:1934838X
10683356
DOI:10.3103/s1068335609010047