Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
| العنوان: | Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides |
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| المؤلفون: | Thomas D. Anthopoulos, Wen-Hao Chang, Jui-Han Fu, Wei Ting Hsu, Vincent Tung, Dipti R Naphade, Rehab Albaridy, Lain-Jong Li, Mariam Hakami, Chen Tse-An, Jeehwan Kim, Zhen Cao, Emre Yengel, Steven Brems, Chien-Ju Lee, Chih-Piao Chuu, Chih-Chan Hsu, Areej Aljarb, Sang-Hoon Bae, Ming-Yang Li, Sergei Lopatin, Yi Wan |
| المصدر: | Nature Materials. 19:1300-1306 |
| بيانات النشر: | Springer Science and Business Media LLC, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Electron mobility, Materials science, Oxide, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, Epitaxy, 01 natural sciences, law.invention, chemistry.chemical_compound, law, Monolayer, General Materials Science, business.industry, Mechanical Engineering, Transistor, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Exfoliation joint, 0104 chemical sciences, chemistry, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business |
| الوصف: | Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (iii) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V−1 s−1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications. Aligned arrays of single-crystalline monolayer TMD nanoribbons with high aspect ratios, as well as their lateral heterostructures, are realized, with the growth directed by the ledges on the β-Ga2O3 substrate. This approach provides an epitaxy platform for advanced electronics applications of TMD nanoribbons. |
| تدمد: | 1476-4660 1476-1122 |
| DOI: | 10.1038/s41563-020-0795-4 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::da175c5bbbbbe991e3ddf69b1d9269ff https://doi.org/10.1038/s41563-020-0795-4 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi...........da175c5bbbbbe991e3ddf69b1d9269ff |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 14764660 14761122 |
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| DOI: | 10.1038/s41563-020-0795-4 |