Vertical Diamond Trench MOS Barrier Schottky Diodes With High Breakdown Voltage
| العنوان: | Vertical Diamond Trench MOS Barrier Schottky Diodes With High Breakdown Voltage |
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| المؤلفون: | Juan Wang, Guoqing Shao, Qi Li, Genqiang Chen, Xiuliang Yan, Zhiqiang Song, Yanfeng Wang, Ruozheng Wang, Wei Wang, Shuwei Fan, Hong-Xing Wang |
| المصدر: | IEEE Transactions on Electron Devices. 69:6231-6235 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials |
| تدمد: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2022.3206178 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::da11ff810ab1cc282a0d2df76f699edd https://doi.org/10.1109/ted.2022.3206178 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........da11ff810ab1cc282a0d2df76f699edd |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
|---|---|
| DOI: | 10.1109/ted.2022.3206178 |