GaN and Ga2O3 Heterostructure Grown by MBE and Their Interfacial Properties
العنوان: | GaN and Ga2O3 Heterostructure Grown by MBE and Their Interfacial Properties |
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المؤلفون: | Ho, Shao-Ting |
بيانات النشر: | Cornell University Library, 2020. |
سنة النشر: | 2020 |
DOI: | 10.7298/1y2m-nk82 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::d96dbc6cbaaef0d22097d67bc4ea7dcb |
رقم الانضمام: | edsair.doi...........d96dbc6cbaaef0d22097d67bc4ea7dcb |
قاعدة البيانات: | OpenAIRE |
DOI: | 10.7298/1y2m-nk82 |
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