Si 1−x Ge x bulk crystals (0.2 1−x Ge x crystals were characterized by measuring concentration profile along and perpendicular to the growth axis, indicating good compositional homogeneity. High crystalline quality was evaluated by electron backscatter spectroscopy and X-ray diffraction. Measured hole mobility was higher than the previously reported data for the similar dopant concentration and Ge content, suggesting smaller alloy scattering effects and high crystalline nature in the TLZ-grown Si 1−x Ge x bulk crystals.