Achieving high-performance complementary metal-oxidesemiconductor field-effect transistors drives the downscaling of silicon technology forward. High dielectric constant materials are becoming increasingly favorable due to the exponential increase in tunneling currents with decreasing SiO2 thickness in the ultrathin regime. Of these, ZrO2 and HfO2 are the most promising candidates for their high relative dielectric constant = 20-25 and good thermal stability. Applying high- materials can maintain the same gate capacitance in terms of the equivalent oxide thickness EOT of SiO2 while decreasing the tunneling current with a thicker physical thickness.