التفاصيل البيبلوغرافية
| العنوان: |
Effect Of Ion-bombardment Intensity Due To The Charging On Sidewall Trench Formatiom |
| المؤلفون: |
H.C. Lee, S. Vanhaelemeersch, S. Beckx |
| المصدر: |
2nd International Symposium on Plasma Process-Induced Damage. |
| بيانات النشر: |
IEEE, 1997. |
| سنة النشر: |
1997 |
| مصطلحات موضوعية: |
Fabrication, Materials science, Large Hadron Collider, Silicon, chemistry, Resist, Etching (microfabrication), Trench, chemistry.chemical_element, Electron, Atomic physics, Intensity (heat transfer) |
| DOI: |
10.1109/ppid.1997.596753 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::cee0808dc002e0cfb0d70d3b20d079e0
https://doi.org/10.1109/ppid.1997.596753 |
| رقم الانضمام: |
edsair.doi...........cee0808dc002e0cfb0d70d3b20d079e0 |
| قاعدة البيانات: |
OpenAIRE |