Transparent conducting zinc oxide thin films doped with aluminum and molybdenum
العنوان: | Transparent conducting zinc oxide thin films doped with aluminum and molybdenum |
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المؤلفون: | David M. Wood, Timothy J. Coutts, Teresa M. Barnes, Joel N. Duenow, Timothy A. Gessert, Bobby To, Matthew Young |
المصدر: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:955-960 |
بيانات النشر: | American Vacuum Society, 2007. |
سنة النشر: | 2007 |
مصطلحات موضوعية: | Electron mobility, Materials science, Dopant, Inorganic chemistry, Doping, Wide-bandgap semiconductor, Analytical chemistry, chemistry.chemical_element, Surfaces and Interfaces, Sputter deposition, Condensed Matter Physics, Surfaces, Coatings and Films, chemistry, Sputtering, Molybdenum, Thin film |
الوصف: | Undoped ZnO, ZnO:Al (0.5, 1, and 2wt% Al2O3), and ZnO:Mo (2wt% Mo) films were deposited by radio-frequency magnetron sputtering. Optimal deposition temperature was found to be ∼200°C for all films. Electron mobilities of 48cm2V−1s−1 were achieved for undoped ZnO films using a sputtering gas with H2∕Ar ratio of 0.3%; corresponding carrier concentrations were ∼3×1019cm−3. A target incorporating 0.5wt% Al2O3 in ZnO yielded films with mobility of 36cm2V−1s−1 and carrier concentration of 3.4×1020cm−3. These films present comparable conductivity and lower free-carrier absorption than films grown from a target containing 2wt% Al2O3. Mo was found to be an n-type dopant of ZnO, though electrical and optical properties were inferior to those of ZnO:Al. Temperature-dependent Hall measurements of ZnO:Al films show evidence of a different scattering mechanism than ZnO:Mo films. |
تدمد: | 1520-8559 0734-2101 |
DOI: | 10.1116/1.2735951 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::cd8515eaea101c2abaef6bdfd39cdee2 https://doi.org/10.1116/1.2735951 |
رقم الانضمام: | edsair.doi...........cd8515eaea101c2abaef6bdfd39cdee2 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 15208559 07342101 |
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DOI: | 10.1116/1.2735951 |