Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
| العنوان: | Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties |
|---|---|
| المؤلفون: | V. V. Zabrodskiy, Nikolai A. Sobolev, A. E. Kalyadin, Elena I. Shek, P. N. Aruev, Anatoly M. Strel'chuk |
| المصدر: | Semiconductors. 50:249-251 |
| بيانات النشر: | Pleiades Publishing Ltd, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | Materials science, Fabrication, chemistry.chemical_element, 02 engineering and technology, engineering.material, 01 natural sciences, law.invention, law, 0103 physical sciences, Boron, Diode, Common emitter, 010302 applied physics, business.industry, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Polycrystalline silicon, chemistry, engineering, Optoelectronics, 0210 nano-technology, Luminescence, business, Light-emitting diode |
| الوصف: | SiGe-based n+–p–p+ light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers. |
| تدمد: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616020111 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::c6c0d79f559a9b33ae246201f1a346c1 https://doi.org/10.1134/s1063782616020111 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........c6c0d79f559a9b33ae246201f1a346c1 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10906479 10637826 |
|---|---|
| DOI: | 10.1134/s1063782616020111 |