Weakly anisotropic residual contact stress in silicon demonstrated by electron backscatter diffraction and expanding cavity models
| العنوان: | Weakly anisotropic residual contact stress in silicon demonstrated by electron backscatter diffraction and expanding cavity models |
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| المؤلفون: | Lawrence H. Friedman, Robert F. Cook |
| المصدر: | Applied Physics Letters. 113:231903 |
| بيانات النشر: | AIP Publishing, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Deformation (mechanics), Isotropy, Geometry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Stress field, Contact mechanics, Residual stress, law, 0103 physical sciences, Cartesian coordinate system, 0210 nano-technology, Anisotropy, Electron backscatter diffraction |
| الوصف: | The residual stress field surrounding an elastic-plastic spherical indentation contact in Si is determined by electron backscatter diffraction (EBSD)-based experimental measurements and expanding hemispherical cavity-based models. The experiments provide support for indentations as test vehicles for assessment of EBSD as a two-dimensional deformation mapping method but make clear that selection of coordinate axes is critical to determining the correct representation of a stress field. The use of principal stress coordinates rather than the conventional Cartesian coordinates is required in cases in which the direction of the stress field is not aligned with Cartesian axes. In particular, the use of principal coordinates in the analysis of a spherical indentation stress field in Si removed misleading artefacts from the Cartesian-based field and revealed only a weak effect of Si crystalline elastic anisotropy. The experimental results are supported by isotropic and anisotropic finite element analysis models. |
| تدمد: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5055859 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::c4f0b118441c6b53e5887ad148be1dbc https://doi.org/10.1063/1.5055859 |
| رقم الانضمام: | edsair.doi...........c4f0b118441c6b53e5887ad148be1dbc |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10773118 00036951 |
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| DOI: | 10.1063/1.5055859 |