Novel Ruthenium(II) Precursor for Metal–Organic Chemical Vapor Deposition
| العنوان: | Novel Ruthenium(II) Precursor for Metal–Organic Chemical Vapor Deposition |
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| المؤلفون: | Takumi Kadota, Chihiro Hasegawa, Hiroshi Nihei |
| المصدر: | Japanese Journal of Applied Physics. 47:6427-6430 |
| بيانات النشر: | IOP Publishing, 2008. |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), General Engineering, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Chemical vapor deposition, Microstructure, Ruthenium, Metal, chemistry, X-ray photoelectron spectroscopy, Electrical resistivity and conductivity, visual_art, visual_art.visual_art_medium, Thin film, Carbon |
| الوصف: | Ruthenium thin films were deposited using a new novel Ru precursor, bis(acetylacetonato)(η4-1,5-hexadiene)ruthenium, Ru(acac)2(hd). Ru(acac)2(hd) is a brown viscous liquid and stable in moisture and air at room temperature. The resisitivity, microstructure and surface morphology of the deposited Ru thin films were examined. The Ru thin films had a low resistivity of 12.5 µΩcm at 360 °C. A very small amount of O2 gas (0.5% O2 gas concentration) is necessary as a reactant gas to decrease the resistivity of the Ru thin films. X-ray photoelectron spectroscopy (XPS) showed that the Ru thin films contained no carbon and oxygen impurities. The Ru thin film surface was fairly smooth, as measured by atomic force microscopy (AFM). The root-mean-square (RMS) roughness of the Ru thin films was 0.91 nm. |
| تدمد: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.47.6427 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::c3f82d4c53d5cbcb9bcc680877d6a2ce https://doi.org/10.1143/jjap.47.6427 |
| رقم الانضمام: | edsair.doi...........c3f82d4c53d5cbcb9bcc680877d6a2ce |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
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| DOI: | 10.1143/jjap.47.6427 |