Advances in Transdisciplinary Engineering ISBN: 9781643683362
بيانات النشر:
IOS Press, 2022.
سنة النشر:
2022
الوصف:
This work examines the consequence of γ radioactivity on SOI-based Tunnel Field Effect Transistors & their use as radiation dosimeters. Extensive simulations have been carried out throughout the study in order to examine the creation of e--h+ pairs in the oxide field & to predict the device’s features from the region where the transistor operation around the pinch-off voltage to the significant agglomeration area. It was found that in the presence of a radiation field, the radioactivity-persuaded reduction in pinch-off voltage shift & boundary trapped electrons could not be unnoticed. Furthermore, the radiation properties of TFET were compared to those of MOSFET with the intention of ascertaining its competency as a dosimeter. The Γ radiation model of Silvaco-TCAD was utilised to determine the radiation efficiency of the SOI TFET.