SiC Die Attach for High-Temperature Applications
| العنوان: | SiC Die Attach for High-Temperature Applications |
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| المؤلفون: | F. Lacroix, A. Drevin-Bazin, Jean François Barbot |
| المصدر: | Journal of Electronic Materials. 43:695-701 |
| بيانات النشر: | Springer Science and Business Media LLC, 2013. |
| سنة النشر: | 2013 |
| مصطلحات موضوعية: | Materials science, business.product_category, Diffusion, Metallurgy, Intermetallic, Sintering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Shear (sheet metal), Creep, Soldering, Materials Chemistry, Die (manufacturing), Electrical and Electronic Engineering, business, Eutectic system |
| الوصف: | Eutectic solders AuIn19 and AuGe12 and nanosilver paste were investigated for SiC die attach in high-temperature (300°C) applications. The soldering or sintering conditions were optimized through die shear tests performed at room temperature. In particular, application of static pressure (3.5 MPa) during sintering resulted in greatly improved mechanical behavior of the nanosilver-based joint. Microstructural study of the eutectic solders showed formation of Au-rich grains in AuGe die attach and significant diffusion of Au and In through the Ni layer in AuIn19 die attach, which could lead to formation of intermetallic compounds. Die shear tests versus temperature showed that the behaviors of the studied die attaches are different; nevertheless they present suitable shear strengths required for high-temperature applications. The mechanical behavior of joints under various levels of thermal and mechanical stress was also studied. Creep experiments were carried out on the eutectic solders to describe the thermomechanical behavior of the complete module; only one creep mechanism was observed in the working range. |
| تدمد: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-013-2718-5 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::c07aba014242252e355d5bd82cdfc490 https://doi.org/10.1007/s11664-013-2718-5 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........c07aba014242252e355d5bd82cdfc490 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1543186X 03615235 |
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| DOI: | 10.1007/s11664-013-2718-5 |