Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
| العنوان: | Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics |
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| المؤلفون: | Meng-Hsi Chuang, Anantha P. Chandrakasan, Yuxuan Lin, Jing Kong, Dina El-Damak, Ahmad Zubair, Dimitri A. Antoniadis, Lili Yu, Yi-Hsien Lee, Ujwal Radhakrishna, Tomas Palacios, Yuhao Zhang, Xi Ling |
| المصدر: | Nano Letters. 16:6349-6356 |
| بيانات النشر: | American Chemical Society (ACS), 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | Materials science, NAND gate, Bioengineering, Nanotechnology, 02 engineering and technology, Integrated circuit, 01 natural sciences, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, General Materials Science, Electronics, Electronic circuit, 010302 applied physics, Digital electronics, Sequential logic, business.industry, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Switched capacitor, XNOR gate, Optoelectronics, 0210 nano-technology, business, Hardware_LOGICDESIGN |
| الوصف: | Two-dimensional electronics based on single-layer (SL) MoS2 offers significant advantages for realizing large-scale flexible systems owing to its ultrathin nature, good transport properties, and stable crystalline structure. In this work, we utilize a gate first process technology for the fabrication of highly uniform enhancement mode FETs with large mobility and excellent subthreshold swing. To enable large-scale MoS2 circuit, we also develop Verilog-A compact models that accurately predict the performance of the fabricated MoS2 FETs as well as a parametrized layout cell for the FET to facilitate the design and layout process using computer-aided design (CAD) tools. Using this CAD flow, we designed combinational logic gates and sequential circuits (AND, OR, NAND, NOR, XNOR, latch, edge-triggered register) as well as switched capacitor dc–dc converter, which were then fabricated using the proposed flow showing excellent performance. The fabricated integrated circuits constitute the basis of a standard cel... |
| تدمد: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.6b02739 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::c0121f454a124b5a7e21fa53f73c198c https://doi.org/10.1021/acs.nanolett.6b02739 |
| رقم الانضمام: | edsair.doi...........c0121f454a124b5a7e21fa53f73c198c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15306992 15306984 |
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| DOI: | 10.1021/acs.nanolett.6b02739 |