High conductivity β-Ga2O3 formed by hot Si ion implantation
| العنوان: | High conductivity β-Ga2O3 formed by hot Si ion implantation |
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| المؤلفون: | Arka Sardar, Tamara Isaacs-Smith, Jacob Lawson, Thaddeus Asel, Ryan B. Comes, Joseph N. Merrett, Sarit Dhar |
| المصدر: | Applied Physics Letters. 121:262101 |
| بيانات النشر: | AIP Publishing, 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Physics and Astronomy (miscellaneous) |
| الوصف: | This work demonstrates the advantage of carrying out silicon ion (Si+) implantation at high temperatures for forming controlled heavily doped regions in gallium oxide. Room temperature (RT, 25 °C) and high temperature (HT, 600 °C) Si implants were carried out into MBE grown (010) β-Ga2O3 films to form ∼350 nm deep Si-doped layers with average concentrations up to ∼1.2 × 1020 cm−3. For such high concentrations, the RT sample was too resistive for measurement, but the HT samples had 82.1% Si dopant activation efficiency with a high sheet electron concentration of 3.3 × 1015 cm−2 and an excellent mobility of 92.8 cm2/V·s at room temperature. X-ray diffraction measurements indicate that HT implantation prevents the formation of other Ga2O3 phases and results in reduced structural defects and lattice damage. These results are highly encouraging for achieving ultra-low resistance heavily doped Ga2O3 layers using ion implantation. |
| تدمد: | 1077-3118 0003-6951 |
| DOI: | 10.1063/5.0127457 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b82b175ce2078d14d393a114cc83ac2e https://doi.org/10.1063/5.0127457 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........b82b175ce2078d14d393a114cc83ac2e |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10773118 00036951 |
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| DOI: | 10.1063/5.0127457 |