$1.3~\mu $ m Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit
| العنوان: | $1.3~\mu $ m Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit |
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| المؤلفون: | Arnab Hazari, Junseok Heo, John Dallesasse, Pallab Bhattacharya, Joanna Mirecki Millunchick, Lifan Yan, Fu-Chen Hsiao |
| المصدر: | IEEE Journal of Quantum Electronics. 53:1-9 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Materials science, Physics::Instrumentation and Detectors, Wafer bonding, Nanowire, Physics::Optics, 02 engineering and technology, law.invention, Condensed Matter::Materials Science, 020210 optoelectronics & photonics, Selective area epitaxy, law, 0202 electrical engineering, electronic engineering, information engineering, Wafer, Electrical and Electronic Engineering, Silicon photonics, business.industry, Photonic integrated circuit, Optical interconnect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Photodiode, Optoelectronics, 0210 nano-technology, business |
| الوصف: | A feasible optical interconnect on a silicon complementary metal-oxide-semiconductor chip demands epitaxial growth and monolithic integration of diode lasers and optical detectors with guided wave components on a (001) Si wafer, with all the components preferably operating in the wavelength range of 1.3-1.55 μm at room temperature. It is also desirable for the fabrication technique to be relatively simple and reproducible. Techniques demonstrated in the past for having optically and electrically pumped GaAs and InP-based lasers on silicon include wafer bonding, selective area epitaxy, epitaxy on tilted substrates, and use of quantum dot or planar buffer layers. Here, we present a novel monolithic optical interconnect on a (001) Si substrate consisting of a III-nitride dot-in-nanowire array edge emitting diode laser and guided wave photodiode, with a planar SiO 2 /Si 3 N 4 dielectric waveguide in between. The active devices are realized with the same nanowire heterostructure by one-step epitaxy. The electronic properties of the InN dot-like nanostructures and mode confinement and propagation in the nanowire waveguides have been modeled. The laser, emitting at the desired wavelength of 1.3 μm, with threshold current ~350 mA for a device of dimension 50 μm × 2 mm, has been characterized in detail. The detector exhibits a responsivity ~0.1 A/W at 1.3 μm. Operation of the entire optical interconnect via the dielectric waveguide is demonstrated. |
| تدمد: | 1558-1713 0018-9197 |
| DOI: | 10.1109/jqe.2017.2708526 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b6336a531a0a69e465923949ba5abc1b https://doi.org/10.1109/jqe.2017.2708526 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi...........b6336a531a0a69e465923949ba5abc1b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15581713 00189197 |
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| DOI: | 10.1109/jqe.2017.2708526 |