Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
| العنوان: | Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs |
|---|---|
| المؤلفون: | Yoon-Ha Jeong, Hyun Chul Sagong, Js Lee, D. Y. Choi, C. Y. Kang, Eui-Young Jeong, C. W. Sohn |
| المصدر: | Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials. |
| بيانات النشر: | The Japan Society of Applied Physics, 2011. |
| سنة النشر: | 2011 |
| مصطلحات موضوعية: | Materials science, business.industry, Optoelectronics, Channel (broadcasting), business, High-κ dielectric, Hot carrier effect |
| DOI: | 10.7567/ssdm.2011.p-6-1 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b33c1b7f9f2d116e2797a20050f69eab https://doi.org/10.7567/ssdm.2011.p-6-1 |
| رقم الانضمام: | edsair.doi...........b33c1b7f9f2d116e2797a20050f69eab |
| قاعدة البيانات: | OpenAIRE |
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