Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs

التفاصيل البيبلوغرافية
العنوان: Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
المؤلفون: Yoon-Ha Jeong, Hyun Chul Sagong, Js Lee, D. Y. Choi, C. Y. Kang, Eui-Young Jeong, C. W. Sohn
المصدر: Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
بيانات النشر: The Japan Society of Applied Physics, 2011.
سنة النشر: 2011
مصطلحات موضوعية: Materials science, business.industry, Optoelectronics, Channel (broadcasting), business, High-κ dielectric, Hot carrier effect
DOI: 10.7567/ssdm.2011.p-6-1
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b33c1b7f9f2d116e2797a20050f69eab
https://doi.org/10.7567/ssdm.2011.p-6-1
رقم الانضمام: edsair.doi...........b33c1b7f9f2d116e2797a20050f69eab
قاعدة البيانات: OpenAIRE