Silicon Surface Passivation by Atomic Layer Deposited Hafnium Oxide Films: Trap States Investigation Using Constant Voltage Stress Studies
| العنوان: | Silicon Surface Passivation by Atomic Layer Deposited Hafnium Oxide Films: Trap States Investigation Using Constant Voltage Stress Studies |
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| المؤلفون: | Abhishek Kumar, Subha Laxmi, Vandana Vandana, Shweta Tomer, Meenakshi Devi, Chandra Mohan Singh Rauthan |
| المصدر: | IEEE Journal of Photovoltaics. 10:1614-1623 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Hydrogen, Silicon, Passivation, Annealing (metallurgy), Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Nitrogen, Electronic, Optical and Magnetic Materials, Atomic layer deposition, chemistry, 0103 physical sciences, Constant voltage, Electrical and Electronic Engineering, 0210 nano-technology, Recombination |
| الوصف: | Excellent silicon surface passivation is demonstrated by the HfOx film deposited using optimized atomic layer deposition (ALD) process. For pristine films, surface recombination velocity (SRV) as low as ∼29 cm/s is achieved. The highest effective lifetime of 3 ms, corresponding to SRV of ∼5 cm/s, is achieved for hydrogen ambient annealed films. Capacitance–voltage and conductance–voltage measurements confirm that the pristine film consists of positive fixed charges, which remain of the same type or change polarity depending on the postdeposition annealing ambient. Constant voltage stress (CVS) measurements reveal that acceptor-like trap states are present in the film. These trap states are intrinsic in nature and are incorporated in the film structure during ALD growth. CVS study gives an insight to the change in fixed charge polarity in nitrogen ambient annealing, which is not the case in hydrogen ambient. The reduction in surface recombination losses is explained as a combined effect of field and chemical passivation where former dominates in nitrogen and later is dominant in hydrogen ambient annealed films. |
| تدمد: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2020.3022686 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b267e0c277066f489926ee4112b2d005 https://doi.org/10.1109/jphotov.2020.3022686 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........b267e0c277066f489926ee4112b2d005 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21563403 21563381 |
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| DOI: | 10.1109/jphotov.2020.3022686 |