First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

التفاصيل البيبلوغرافية
العنوان: First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering
المؤلفون: X.-R. Yu, W.-H Chang, T.-C. Hong, P.-J. Sung, A. Agarwal, G.-L. Luo, C.-T. Wu, K.-H. Kao, C.-J. Su, S.-W. Chang, W.-H. Lu, P.-Y. Fu, J.-H. Lin, P.-H. Wu, T.-C. Cho, W. C.-Yu. Ma, D.-D. Lu, T.-S. Chao, T. Maeda, Y.-J. Lee, W.-F. Wu, W.-K. Yeh, Y.-H. Wang
المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
بيانات النشر: IEEE, 2022.
سنة النشر: 2022
DOI: 10.1109/vlsitechnologyandcir46769.2022.9830316
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::aa851f2d392062a39deed39c595221a1
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830316
Rights: CLOSED
رقم الانضمام: edsair.doi...........aa851f2d392062a39deed39c595221a1
قاعدة البيانات: OpenAIRE
الوصف
DOI:10.1109/vlsitechnologyandcir46769.2022.9830316