Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates
العنوان: | Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates |
---|---|
المؤلفون: | E. V. Osipova, A. V. Osipov, S. A. Kukushkin, I. P. Soshnikov, A. S. Grashchenko, V. I. Nikolaev |
المصدر: | Physics of the Solid State. 60:852-857 |
بيانات النشر: | Pleiades Publishing Ltd, 2018. |
سنة النشر: | 2018 |
مصطلحات موضوعية: | 010302 applied physics, Materials science, Solid-state physics, Auxetics, Silicon, Physics::Optics, chemistry.chemical_element, 02 engineering and technology, Nanoindentation, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Crystal, Condensed Matter::Materials Science, chemistry.chemical_compound, chemistry, 0103 physical sciences, Ultimate tensile strength, Silicon carbide, Composite material, 0210 nano-technology, Anisotropy |
الوصف: | The structural and mechanical properties of gallium oxide films grown on silicon crystallographic planes (001), (011), and (111) with a buffer layer of silicon carbide are investigated. Nanoindentation was used to study the elastoplastic properties of gallium oxide and also to determine the elastic recovery parameter of the films under study. The tensile strength, hardness, elasticity tensor, compliance tensor, Young’s modulus, Poisson’s ratio, and other characteristics of gallium oxide were calculated using quantum chemistry methods. It was found that the gallium oxide crystal is auxetic because, for some stretching directions, the Poisson’s ratio takes on negative values. The calculated values correspond quantitatively to the experimental data. It is concluded that the elastoplastic properties of gallium oxide films approximately correspond to the properties of bulk crystals and that a change in the orientation of the silicon surface leads to a significant change in the orientation of gallium oxide. |
تدمد: | 1090-6460 1063-7834 |
DOI: | 10.1134/s1063783418050104 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::aa388189e1ed50cb5c0bf2390d84d6d8 https://doi.org/10.1134/s1063783418050104 |
Rights: | CLOSED |
رقم الانضمام: | edsair.doi...........aa388189e1ed50cb5c0bf2390d84d6d8 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 10906460 10637834 |
---|---|
DOI: | 10.1134/s1063783418050104 |