High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- $\mu\hbox{m}$ BiCMOS Process for RF-Power Applications
| العنوان: | High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- $\mu\hbox{m}$ BiCMOS Process for RF-Power Applications |
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| المؤلفون: | Bertrand Szelag, D. Muller, C. Rossato, F. Judong, Alexandre Giry, F. Blanchet, O. Noblanc, A. Monroy Aguirre, Raphaël Sommet, Denis Pache |
| المصدر: | IEEE Transactions on Electron Devices. 54:861-868 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2007. |
| سنة النشر: | 2007 |
| مصطلحات موضوعية: | LDMOS, Engineering, business.industry, Semiconductor device fabrication, Amplifier, RF power amplifier, Transistor, Electrical engineering, Electronic, Optical and Magnetic Materials, law.invention, law, MOSFET, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Power semiconductor device, Radio frequency, Electrical and Electronic Engineering, business |
| الوصف: | The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25-mum BiCMOS technology and precisely described to realize a fully salicided gate RF-LDMOS architecture. Significant improvement is obtained on the small-signal - fT and Fmax - and power performances while maintaining good dc characteristics |
| تدمد: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2007.892355 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a97399fc2dce77d9aba868e74bd18894 https://doi.org/10.1109/ted.2007.892355 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........a97399fc2dce77d9aba868e74bd18894 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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| DOI: | 10.1109/ted.2007.892355 |