MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects
| العنوان: | MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects |
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| المؤلفون: | Ryan Fang, Dylan Ma, Ujwal Radhakrishna, Lan Wei |
| المصدر: | 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). |
| بيانات النشر: | IEEE, 2022. |
| سنة النشر: | 2022 |
| DOI: | 10.1109/bcicts53451.2022.10051741 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a717fa168d76f110d2b432d3a298c3dc https://doi.org/10.1109/bcicts53451.2022.10051741 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........a717fa168d76f110d2b432d3a298c3dc |
| قاعدة البيانات: | OpenAIRE |
| DOI: | 10.1109/bcicts53451.2022.10051741 |
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