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Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP

التفاصيل البيبلوغرافية
العنوان:	Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP
المؤلفون:	Boris Ya. Ber, Andreas W. Bett, Partha S. Dutta, Oleg V. Sulima, M.G. Mauk
المصدر:	AIP Conference Proceedings.
بيانات النشر:	AIP, 2003.
سنة النشر:	2003
مصطلحات موضوعية:	Fabrication, Materials science, business.industry, Vapor phase, chemistry.chemical_element, Zinc, Diffusion profile, Gallium arsenide, chemistry.chemical_compound, Direct energy conversion, chemistry, Thermophotovoltaic, Optoelectronics, Diffusion (business), business
الوصف:	This paper reviews recent results of the study of Zn diffusion from the vapor phase in important thermophotovoltaic (TPV) materials such as GaSb‐, InGaAsSb‐, InGaSb‐ and InAsSbP. Peculiarities of Zn diffusion in each of these materials and different ways of tailoring the Zn diffusion profile for fabrication of optimized emitters in TPV cells are discussed.
تدمد:	0094-243X
DOI:	10.1063/1.1539395
URL الوصول:	https://explore.openaire.eu/search/publication?articleId=doi_________::a411da3104d7e7231dcf8c159b9b6a95 https://doi.org/10.1063/1.1539395
رقم الانضمام:	edsair.doi...........a411da3104d7e7231dcf8c159b9b6a95
قاعدة البيانات:	OpenAIRE

الوصف
تدمد:	0094243X
DOI:	10.1063/1.1539395