Fast ZnO Thin-Film Transistor Circuits

التفاصيل البيبلوغرافية
العنوان: Fast ZnO Thin-Film Transistor Circuits
المؤلفون: Lee W. Tutt, Devin A. Mourey, Diane Carol Freeman, Sung Kyu Park, Thomas N. Jackson, Shelby F. Nelson, Peter J. Cowdery-Corvan, Jie Sun, David H. Levy, Dalong Zhao
المصدر: 2007 65th Annual Device Research Conference.
بيانات النشر: IEEE, 2007.
سنة النشر: 2007
مصطلحات موضوعية: Materials science, business.industry, Oscillation, Electrical engineering, Wide-bandgap semiconductor, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, Integrated circuit design, Threshold voltage, law.invention, Thin-film transistor, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Hardware_LOGICDESIGN, Electronic circuit, Voltage
الوصف: We report here five-stage ring-oscillator-integrated circuits fabricated using ZnO TFTs with signal propagation delays as low as 100 ns (>1 MHz oscillation frequency) for a 45 V supply voltage. These circuits also operate at a supply voltage as low as 10 V. To our knowledge, these are the fastest ZnO integrated circuits reported to date. We also designed ring oscillators with different source/gate and drain/gate overlap to investigate aspects of the circuit speed.
تدمد: 1548-3770
DOI: 10.1109/drc.2007.4373631
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a1adcc6632549b1c450b0412f5c8d86c
https://doi.org/10.1109/drc.2007.4373631
رقم الانضمام: edsair.doi...........a1adcc6632549b1c450b0412f5c8d86c
قاعدة البيانات: OpenAIRE
الوصف
تدمد:15483770
DOI:10.1109/drc.2007.4373631