Microminiature Hall probes with sensitive area down to 33×115 μm and based on n-InSb/i-GaAs optimized Sn-doped MBE-grown heterostructures are reported. The “metallurgical” thicknesses of the n-InSb epilayers lie in the range dm=1.1– 10.5 μm giving room-temperature mobilities of (9–15) ×10 3 cm 2 / Vs with carrier densities of (0.96–2.56) ×10 18 cm −3 . Characterization of the devices was performed by magnetotransport measurements in quasi-static and pulsed magnetic fields. In the temperature range 1.1– 300 K and in magnetic fields up to 12 T (static) and up to 52 T (pulsed, τ=120 mS ), transport measurements yield remarkable linearity of the Hall voltage up to 52 T and sensitivity, as well as demonstrating the high-temperature stability of the Hall voltage, the offset voltage and the device resistivity. No significant effect of the high current up to 150 mA on either the sensitivity or the resistivity is observed.