The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
| العنوان: | The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures |
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| المؤلفون: | Kai Ni, Xiaobo Sharon Hu, Matthew Jerry, Panni Wang, Shimeng Yu, Michael Niemier, Xiaoyu Sun, Xunzhao Yin, Dayane Reis, Ann Franchesca Laguna, Suman Datta, Xiaoming Chen |
| المصدر: | IEEE Design & Test. 37:79-99 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Analogue electronics, Computer science, Emerging technologies, business.industry, Transistor, Electrical engineering, 02 engineering and technology, Ferroelectricity, 020202 computer hardware & architecture, law.invention, Resistive random-access memory, CMOS, Hardware and Architecture, law, Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, business, Software, Electronic circuit |
| الوصف: | Editor’s note: Semiconductor industry is steadily on the quest for emerging devices and device technologies that lead to higher performance and higher efficiency of computing over CMOS technology. This tutorial introduces the potential of emerging devices that integrate ferroelectric material into digital as well as analog circuits. With a focus on FeFET technology, the authors first present device characteristics, and advantages in comparison to CMOS but also other emerging technologies such as RRAM. The article comprehensively demonstrates the use of FeFET technology in circuits, architectures, and applications.— Jurgen Teich, FAU Erlangen |
| تدمد: | 2168-2364 2168-2356 |
| DOI: | 10.1109/mdat.2019.2944094 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a110bf8d279ba84b30053bd63f692ff0 https://doi.org/10.1109/mdat.2019.2944094 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........a110bf8d279ba84b30053bd63f692ff0 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21682364 21682356 |
|---|---|
| DOI: | 10.1109/mdat.2019.2944094 |