Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells
العنوان: | Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells |
---|---|
المؤلفون: | Axel Hoffmann, M. Dworzak, G. Jaschke, R. Hildebrant, T. Remmele, Lutz Geelhaar, M. Galluppi, Robert Averbeck, Martin Albrecht, Henning Riechert |
المصدر: | Applied Physics Letters. 88:011903 |
بيانات النشر: | AIP Publishing, 2006. |
سنة النشر: | 2006 |
مصطلحات موضوعية: | Photoluminescence, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Annealing (metallurgy), Epitaxy, Molecular physics, Gallium arsenide, chemistry.chemical_compound, Decay time, chemistry, Molecular beam epitaxial growth, Luminescence, Quantum well |
الوصف: | We compare the luminescence efficiency (i.e., room-temperature photoluminescence intensity), fluctuations in composition and thickness, degree of localization, and luminescence decay times of In0.37Ga0.63As0.983N0.017 quantum wells grown by molecular-beam epitaxy at different temperatures and annealed under a comprehensive variety of conditions. Luminescence efficiency is not directly coupled to structural nonuniformity or localization, and even three-dimensional growth is not detrimental by itself. In contrast, there is always a correlation between luminescence efficiency and nonradiative decay time. Therefore, the luminescence efficiency of InGaAsN quantum wells depends almost exclusively on the density of nonradiative recombination centers, while the influence of structural nonuniformity is negligible. |
تدمد: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.2159566 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::9fab3eb2b6687f4edf9d8054983b0840 https://doi.org/10.1063/1.2159566 |
رقم الانضمام: | edsair.doi...........9fab3eb2b6687f4edf9d8054983b0840 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 10773118 00036951 |
---|---|
DOI: | 10.1063/1.2159566 |