Postdeposition annealing of radio frequency magnetron sputtered ZnO films
| العنوان: | Postdeposition annealing of radio frequency magnetron sputtered ZnO films |
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| المؤلفون: | M. K. Puchert, Robert N. Lamb, P. Y. Timbrell |
| المصدر: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2220-2230 |
| بيانات النشر: | American Vacuum Society, 1996. |
| سنة النشر: | 1996 |
| مصطلحات موضوعية: | Materials science, Annealing (metallurgy), Metallurgy, Recrystallization (metallurgy), Surfaces and Interfaces, Sputter deposition, Condensed Matter Physics, Surfaces, Coatings and Films, Residual stress, Electrical resistivity and conductivity, Sputtering, Crystallite, Thin film, Composite material |
| الوصف: | Zinc oxide (ZnO) films have been deposited on 1 μm SiO2/Si (100) substrates by rf magnetron sputtering. Using a sputtering gas of pure oxygen, a pressure regime is found in which the ZnO films grow on room temperature substrates with a single (0001) orientation, small grains (crystallite sizes ∼10–15 nm), and high intrinsic biaxial compressive stress (∼6 GPa). The effects of post‐deposition annealing these films in air was investigated over a range of temperatures (200–1000 °C) and durations (2–2000 min). Annealing resulted in lower biaxial compressive stresses and increased average crystallite sizes in all films. Additional ZnO grain orientations were detected only after annealing above 500 °C for longer than 90 min, and the results are interpreted in terms of film recrystallization. Consequently, a relatively rapid thermal anneal at 1000 °C for 5 min caused grain recovery without recrystallization, resulting in maximum stress reduction (90%–100% of stress was relieved and average crystallized size tripl... |
| تدمد: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.580050 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::9e84483b1b870ad7aaab5bb44b596dcd https://doi.org/10.1116/1.580050 |
| رقم الانضمام: | edsair.doi...........9e84483b1b870ad7aaab5bb44b596dcd |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15208559 07342101 |
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| DOI: | 10.1116/1.580050 |