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Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode

التفاصيل البيبلوغرافية
العنوان:	Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode
المؤلفون:	Yan-Ten Lu, K. Wu, Chuing-Liang Lin, Yan-Kuin Su, Jia-Rong Chang
المصدر:	IEEE Transactions on Electron Devices. 47:895-897
بيانات النشر:	Institute of Electrical and Electronics Engineers (IEEE), 2000.
سنة النشر:	2000
مصطلحات موضوعية:	Materials science, Condensed matter physics, business.industry, Resonant-tunneling diode, Peak current, Heterojunction, Double barrier, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, business
الوصف:	We propose an unstrained Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15//In/sub 0.53/Ga/sub 0.47/As heterostructure for double-barrier resonant tunneling diode. A peak-to-valley current ratio of 22.3 and a peak current density of 8.9 kA/cm/sup 2/ were achieved for the unstrained Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15//In/sub 0.53/Ga/sub 0.47/As double-barrier resonant tunneling diode at room temperature.
تدمد:	0018-9383
DOI:	10.1109/16.831012
URL الوصول:	https://explore.openaire.eu/search/publication?articleId=doi_________::9dd90cbeef36a8d1db1b92fef191244f https://doi.org/10.1109/16.831012
Rights:	CLOSED
رقم الانضمام:	edsair.doi...........9dd90cbeef36a8d1db1b92fef191244f
قاعدة البيانات:	OpenAIRE

الوصف
تدمد:	00189383
DOI:	10.1109/16.831012