Graphene Nanoribbon FETs: Technology Exploration for Performance and Reliability

التفاصيل البيبلوغرافية
العنوان: Graphene Nanoribbon FETs: Technology Exploration for Performance and Reliability
المؤلفون: Mihir Choudhury, Kartik Mohanram, Youngki Yoon, Jing Guo
المصدر: IEEE Transactions on Nanotechnology. 10:727-736
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE), 2011.
سنة النشر: 2011
مصطلحات موضوعية: Computer science, Circuit design, Hardware_PERFORMANCEANDRELIABILITY, Computer Science Applications, Reliability (semiconductor), CMOS, Nanoelectronics, Logic gate, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Field-effect transistor, Electronics, Electrical and Electronic Engineering, Hardware_LOGICDESIGN, Electronic circuit
الوصف: Graphene nanoribbon FETs (GNRFETs) are promising devices for beyond-CMOS nanoelectronics due to their excellent carrier-transport properties and potential for large-scale processing and fabrication. This paper combines atomistic quantum-transport modeling with circuit simulation to perform technology exploration for GNRFET circuits. Results indicate that GNRFETs offer significant gains over scaled CMOS at the 22-, 32-, and 45-nm nodes, with over 26-144× improvement in the energy-delay product at comparable operating points. A quantitative study of the effects of variations and defects on the performance and reliability of GNRFET circuits is also presented. Simulation results indicate that whereas GNRFET circuits promise higher performance, lower energy consumption, and comparable reliability at similar operating points to scaled CMOS circuits, they are more susceptible to variations and defects. These results motivate significant engineering, modeling, and simulation challenges facing the device and computer-aided design (CAD) communities involved in graphene electronics research.
تدمد: 1941-0085
1536-125X
DOI: 10.1109/tnano.2010.2073718
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9b68b57c64e1f4a1706cb07e80013519
https://doi.org/10.1109/tnano.2010.2073718
Rights: CLOSED
رقم الانضمام: edsair.doi...........9b68b57c64e1f4a1706cb07e80013519
قاعدة البيانات: OpenAIRE
الوصف
تدمد:19410085
1536125X
DOI:10.1109/tnano.2010.2073718