Defects in and device properties of semi-insulating GaAs
| العنوان: | Defects in and device properties of semi-insulating GaAs |
|---|---|
| المؤلفون: | M Seiwa, H. Yamamoto, H Shimakura, T. Inoue, G Kano, O Oda, Manami Mori, M Oyake |
| المصدر: | Semiconductor Science and Technology. 7:A215-A223 |
| بيانات النشر: | IOP Publishing, 1992. |
| سنة النشر: | 1992 |
| مصطلحات موضوعية: | Materials science, Annealing (metallurgy), business.industry, Precipitation (chemistry), Metallurgy, chemistry.chemical_element, Condensed Matter Physics, Chloride, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry, Electrical resistivity and conductivity, Materials Chemistry, medicine, Optoelectronics, Wafer, Electrical and Electronic Engineering, business, Arsenic, Stoichiometry, medicine.drug |
| الوصف: | It is well known that there are many arsenic precipitates in LEC GaAs, the dimensions of which are 500-2000 AA. The authors have recently found that these arsenic precipitates affect the device properties of chloride epitaxial-type MESFETS. They also affect the formation of small surface oval defects on MBE layers. To reduce the density of these arsenic precipitates, a multiple-wafer-annealing (MWA) technology has been developed in which wafers are annealed first at 1100 degrees C and then at 950 degrees C. By this annealing, highly uniform substrates with low arsenic precipitate densities, uniform PL and CL, uniform microscopic resistivity distributions and uniform surface morphology after AB etching can be obtained. These MWA wafers showed low threshold voltage variations for condensed ion-implantation-type MESFETS. In the present paper recent works are reviewed and the mechanism of arsenic precipitation is discussed from the viewpoint of stoichiometry. |
| تدمد: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/7/1a/042 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::999bcb9e25a63b72d52e240f598216c4 https://doi.org/10.1088/0268-1242/7/1a/042 |
| رقم الانضمام: | edsair.doi...........999bcb9e25a63b72d52e240f598216c4 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13616641 02681242 |
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| DOI: | 10.1088/0268-1242/7/1a/042 |