1T DRAM with Raised SiGe Quantum Well for Sensing Margin Improvement
| العنوان: | 1T DRAM with Raised SiGe Quantum Well for Sensing Margin Improvement |
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| المؤلفون: | Si-Won Lee, Seongjae Cho, Il-Hwan Cho, Garam Kim |
| المصدر: | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 23:64-70 |
| بيانات النشر: | The Institute of Electronics Engineers of Korea, 2023. |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials |
| تدمد: | 2233-4866 1598-1657 |
| DOI: | 10.5573/jsts.2023.23.1.64 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::9871c1a975d891302e503bdd1a84be01 https://doi.org/10.5573/jsts.2023.23.1.64 |
| رقم الانضمام: | edsair.doi...........9871c1a975d891302e503bdd1a84be01 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 22334866 15981657 |
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| DOI: | 10.5573/jsts.2023.23.1.64 |