أعرض في EDS

A12O3 optimization for Charge Trap memory application

التفاصيل البيبلوغرافية
العنوان:	A12O3 optimization for Charge Trap memory application
المؤلفون:	C. Scozzari, G. Albini, M. Alessandri, S. Amoroso, P. Bacciaglia, A. Del Vitto, G. Ghidini, A. Grossi, A. Mauri, A. Modelli, R. Piagge, A. Sebastiani, P. Tessariol
المصدر:	2008 9th International Conference on Ultimate Integration of Silicon.
بيانات النشر:	IEEE, 2008.
سنة النشر:	2008
مصطلحات موضوعية:	Stack-based memory allocation, Materials science, business.industry, Annealing (metallurgy), Oxide, Thermal treatment, law.invention, chemistry.chemical_compound, Capacitor, Thermal conductivity, chemistry, law, Electronic engineering, Optoelectronics, Crystallization, business, Aluminum oxide
الوصف:	Aim of this work is the study the crystallization treatment of Alumina used as blocking oxide in Charge Trap memories. We have found that thermal treatment before gate deposition is able to crystallize Alumina giving better erase and write efficiency than any treatment after gate deposition, without degradation of the memory stack.
DOI:	10.1109/ulis.2008.4527171
URL الوصول:	https://explore.openaire.eu/search/publication?articleId=doi_________::9756b26a8c5a6bf8932764d14c0cc02d https://doi.org/10.1109/ulis.2008.4527171
رقم الانضمام:	edsair.doi...........9756b26a8c5a6bf8932764d14c0cc02d
قاعدة البيانات:	OpenAIRE

الوصف
DOI:	10.1109/ulis.2008.4527171