Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation
| العنوان: | Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation |
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| المؤلفون: | Evgueni Chagarov, Peter M. Asbeck, Krishna C. Saraswat, Andrew C. Kummel, Joël Cagnon, Yu Yuan, Paul C. McIntyre, Eunji Kim, Susanne Stemmer |
| المصدر: | Journal of Applied Physics. 106:124508 |
| بيانات النشر: | AIP Publishing, 2009. |
| سنة النشر: | 2009 |
| مصطلحات موضوعية: | Materials science, Condensed matter physics, business.industry, Band gap, Fermi level, Analytical chemistry, General Physics and Astronomy, Chemical vapor deposition, Gallium arsenide, symbols.namesake, Atomic layer deposition, chemistry.chemical_compound, Semiconductor, chemistry, symbols, Work function, Field-effect transistor, business |
| الوصف: | III-V semiconductor field effect transistors require an insulator/channel interface with a low density of electrically active defects and a minimal interface dipole to avoid Fermi level pinning. We demonstrate that an atomically abrupt and unpinned interface can be formed between an In0.53Ga0.47As (100) channel and an Al2O3 dielectric layer grown by atomic layer deposition (ALD) when oxidation of the substrate surface is prevented before and during oxide deposition. X-ray photoelectron spectra and electron microscopy indicate that in situ desorption of a protective As2 layer on the In0.53Ga0.47As (100)−4×2 surface followed by ALD of Al2O3 produced an atomically abrupt interface without Fermi level pinning. Temperature-dependent and frequency-dependent capacitance-voltage and conductance-voltage analysis of the resulting Pt/Al2O3/InGaAs capacitors are consistent with movement of the Fermi level through the InGaAs band gap. Moreover, the nearly ideal flat band voltages observed for gate metals of widely var... |
| تدمد: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.3266006 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::961acc53c31ab8cd126df757befa570a https://doi.org/10.1063/1.3266006 |
| رقم الانضمام: | edsair.doi...........961acc53c31ab8cd126df757befa570a |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10897550 00218979 |
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| DOI: | 10.1063/1.3266006 |