Evaluation of Process Damage Induced by Sputtering of Transparent Conductive Oxide Films for Crystalline Silicon Solar Cells
| العنوان: | Evaluation of Process Damage Induced by Sputtering of Transparent Conductive Oxide Films for Crystalline Silicon Solar Cells |
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| المؤلفون: | Atsushi Ogura, Tappei Nishihara, Hiroki Kanai |
| المصدر: | ECS Journal of Solid State Science and Technology. 10:035002 |
| بيانات النشر: | The Electrochemical Society, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, business.industry, Sputtering, Scientific method, Optoelectronics, Crystalline silicon, business, Electronic, Optical and Magnetic Materials, Transparent conducting film |
| الوصف: | We evaluated the damage to crystalline silicon caused by sputtering deposition of transparent conductive oxide films (TCO). We confirmed that direct deposition of TCO on the crystalline silicon deteriorates the carrier lifetime. Also, the difference in discharge voltage during the TCO sputtering has an influence on plasma damage and damage penetration depth to the crystalline silicon. We consider that the carrier lifetime is reduced because of the surface recombination posed by the damage. Furthermore, photoluminescence (PL) spectroscopy was performed, and the so-called “irradiation-induced defects,” defects that are formed typically after electron beam and ion irradiation, were observed at deep levels of 0.789 eV, 0.767 eV, and 0.714 eV. These irradiation-induced defects act as recombination centers and may cause the deterioration of the conversion efficiency in crystalline silicon solar cells. We believe understanding and controlling these defects are important for improving the conversion efficiency of solar cells. |
| تدمد: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2162-8777/abe8ef |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::933be8d9a21ad613a2766f16b20e09a5 https://doi.org/10.1149/2162-8777/abe8ef |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........933be8d9a21ad613a2766f16b20e09a5 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21628777 21628769 |
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| DOI: | 10.1149/2162-8777/abe8ef |