High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
| العنوان: | High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon |
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| المؤلفون: | Mamidala Saketh Ram, Karl-Magnus Persson, Austin Irish, Adam Jönsson, Rainer Timm, Lars-Erik Wernersson |
| المصدر: | Nature Electronics. 4:914-920 |
| بيانات النشر: | Springer Science and Business Media LLC, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Instrumentation, Electronic, Optical and Magnetic Materials |
| تدمد: | 2520-1131 |
| DOI: | 10.1038/s41928-021-00688-5 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::92eaf0761865ddb8a7b04c7407176f5c https://doi.org/10.1038/s41928-021-00688-5 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........92eaf0761865ddb8a7b04c7407176f5c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 25201131 |
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| DOI: | 10.1038/s41928-021-00688-5 |