Sub-0.1-µm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
| العنوان: | Sub-0.1-µm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process |
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| المؤلفون: | Masaru Sasago, Nobuyuki Matsuzawa, Taku Morisawa, Takahiro Matsuo, Yuko Kaimoto, Koichi Kuhara, Shigeyasu Mori, Masayuki Endo |
| المصدر: | Japanese Journal of Applied Physics. 37:6734 |
| بيانات النشر: | IOP Publishing, 1998. |
| سنة النشر: | 1998 |
| مصطلحات موضوعية: | Surface (mathematics), Depth of focus, Fabrication, Materials science, business.industry, Resolution (electron density), General Engineering, Process (computing), General Physics and Astronomy, Optics, Line (geometry), business, Lithography, Exposure latitude |
| الوصف: | This paper presents a 193-nm top surface imaging (TSI) process for the sub-0.10-µm-device rule. The process achieved a 0.07-µm contact hole, 0.04-µm isolated line, and 0.06-µm space pattern without the need for any optical resolution enhancement technique. An exposure latitude of ±10% was obtained for the process with a 0.10-µm contact hole. We can obtain a sufficient depth of focus (DOF) by using an attenuated phase-shifting mask. We resolved a 0.085-µm line-and-space pattern by using an alternative phase-shifting mask, and obtained a 0.8-µm DOF for a 0.09-µm line-and-space pattern, using an alternative phase-shifting mask. We demonstrated the fabrication of sub-0.10-µm line-and-space binary patterns. Sub-0.10-µm patterns were produced by using the TSI process for 193-nm lithography. |
| تدمد: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.37.6734 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::90614fe042934954dd834f4d7822904a https://doi.org/10.1143/jjap.37.6734 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........90614fe042934954dd834f4d7822904a |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
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| DOI: | 10.1143/jjap.37.6734 |