Resistive-state anomaly in superconducting nanostructures

التفاصيل البيبلوغرافية
العنوان: Resistive-state anomaly in superconducting nanostructures
المؤلفون: S. V. Lotkhov, K. Yu. Arutyunov, A. B. Pavolotski, Leo Rinderer, D. A. Presnov
المصدر: Physical Review B. 59:6487-6498
بيانات النشر: American Physical Society (APS), 1999.
سنة النشر: 1999
مصطلحات موضوعية: Superconductivity, Physics, Resistive touchscreen, Superposition principle, Condensed matter physics, Electric field, Biasing, Anomaly (physics), Magnetic field, Voltage
الوصف: The resistive anomaly, an increase of sample resistance above the normal state value at the top of the superconducting transition, has been studied experimentally in various aluminum nanostructures. The effect is not absolutely reproducible being dependent on the cooling history and on the particular arrangement of voltage and current probes for multiterminal samples. If the anomaly is clearly observed, its magnitude can be suppressed by a strong bias current and/or magnetic field. It is shown that the main factor determining the form of the $R(T)$ transition in lift-off fabricated nanostructures is the inevitable film inhomogeneity, being a ``fingerprint'' of each particular sample. The origin of the anomaly is attributed to a superposition of two processes. First, the formation of deformed (not perpendicular to the wire axis) $N/S$ boundaries, and, second, the existence of a nonequilibrium region inside the superconducting domain close to this $N/S$ interface, characterized by a finite value of the electric field and the corresponding effective resistance. Only a combination of the above effects can give a reasonable quantitative agreement with experimental data.
تدمد: 1095-3795
0163-1829
DOI: 10.1103/physrevb.59.6487
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8eceb801b6fa7715d0229d4ef5832b3f
https://doi.org/10.1103/physrevb.59.6487
Rights: CLOSED
رقم الانضمام: edsair.doi...........8eceb801b6fa7715d0229d4ef5832b3f
قاعدة البيانات: OpenAIRE
الوصف
تدمد:10953795
01631829
DOI:10.1103/physrevb.59.6487