Gate dielectric development for flexible electronics
| العنوان: | Gate dielectric development for flexible electronics |
|---|---|
| المؤلفون: | John W. Hartzell, Pooran Chandra Joshi, Apostolos T. Voutsas |
| المصدر: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:1161-1165 |
| بيانات النشر: | American Vacuum Society, 2007. |
| سنة النشر: | 2007 |
| مصطلحات موضوعية: | Materials science, business.industry, Gate dielectric, Surfaces and Interfaces, Substrate (electronics), Dielectric, Condensed Matter Physics, Flexible electronics, Surfaces, Coatings and Films, law.invention, Capacitor, Thin-film transistor, law, Optoelectronics, Field-effect transistor, Thin film, business |
| الوصف: | Thin film transistors integrated on flexible substrates are becoming increasingly attractive for low cost displays, sensors, and rf communication applications. The successful development of the flexible devices will be dictated by the enhancement in the thermal stability of the substrates and the low temperature ( |
| تدمد: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.2723765 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::8d24f625b41dcb1bc39acf70d60b5fa2 https://doi.org/10.1116/1.2723765 |
| رقم الانضمام: | edsair.doi...........8d24f625b41dcb1bc39acf70d60b5fa2 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15208559 07342101 |
|---|---|
| DOI: | 10.1116/1.2723765 |