Heavy ions induced electrical and structural defects in thermal SiO/sub 2/ films

التفاصيل البيبلوغرافية
العنوان: Heavy ions induced electrical and structural defects in thermal SiO/sub 2/ films
المؤلفون: P. Siffert, M. Toulemonde, A. Mesli, A. Slaoui, E. Dooryhee, M. C. Busch
المصدر: RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.
بيانات النشر: IEEE, 2002.
سنة النشر: 2002
مصطلحات موضوعية: Materials science, Silicon, Analytical chemistry, Oxide, Charge density, chemistry.chemical_element, Fluence, Ion, chemistry.chemical_compound, chemistry, Vacancy defect, Electrical measurements, Irradiation, Atomic physics
الوصف: The behaviour of SiO/sub 2//Si structures irradiated by high energy (> 0.5 GeV) Xe and Ni ions has been investigated. Structural analysis of the as-irradiated SiO/sub 2/ films, performed with infrared spectroscopy, indicates atomic displacements, broken and strained Si-O bonds induced by irradiation. Electrical measurements of irradiated SiO/sub 2//Si structures show an increase of the interface state density Dit and of the oxide trapped charge density. Not with the fluence. Electrically active defects were detected in Si substrate and are associated with vacancy complexes. >
DOI: 10.1109/radecs.1991.213550
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::874deb4e592a0e0582e52fa92285d577
https://doi.org/10.1109/radecs.1991.213550
رقم الانضمام: edsair.doi...........874deb4e592a0e0582e52fa92285d577
قاعدة البيانات: OpenAIRE
الوصف
DOI:10.1109/radecs.1991.213550