Polycrystalline silicon layer transfer by ion-cut
| العنوان: | Polycrystalline silicon layer transfer by ion-cut |
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| المؤلفون: | N. W. Cheung, N. Quitoriano, C. H. Yun |
| المصدر: | Applied Physics Letters. 82:1544-1546 |
| بيانات النشر: | AIP Publishing, 2003. |
| سنة النشر: | 2003 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), business.industry, Wafer bonding, Polysilicon depletion effect, technology, industry, and agriculture, Nanocrystalline silicon, Direct bonding, engineering.material, Wafer backgrinding, Polycrystalline silicon, Anodic bonding, engineering, Optoelectronics, Wafer, business |
| الوصف: | Ion-cut polycrystalline silicon (polysilicon) layer transfer by thermal separation was demonstrated after observing hydrogen-induced surface blistering and direct bonding of a chemomechanically polished surface. After hydrogen implantation into a chemical-vapor deposited polysilicon wafer (the donor wafer), the wafer surface was polished for wafer bonding. The hydrogen-implanted and polished wafer was then bonded to a thermally oxidized silicon wafer (the handle wafer) by low-temperature wafer direct bonding. The bonded pair was then heated until hydrogen-induced silicon layer cleavage occurred along the hydrogen-implanted layer, resulting in the transfer of the polysilicon layer to the handle substrate. The transferred polysilicon surface had the same roughness as ion-cut single-crystal silicon layers. The layer transfer time of polysilicon was significantly reduced from that of single-crystal silicon, and had an activation energy nearly ten times lower than that of its single-crystal counterpart. |
| تدمد: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1559655 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::843c4d9056b59be84893bdb680628ac7 https://doi.org/10.1063/1.1559655 |
| رقم الانضمام: | edsair.doi...........843c4d9056b59be84893bdb680628ac7 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10773118 00036951 |
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| DOI: | 10.1063/1.1559655 |