Surface characterization of a semiconductor SiGe/Si heterostructure by contact angle measurements
| العنوان: | Surface characterization of a semiconductor SiGe/Si heterostructure by contact angle measurements |
|---|---|
| المؤلفون: | P. Warren, M. Berenguer, E. Fadda, F. Chollet |
| المصدر: | Journal of Adhesion Science and Technology. 10:1067-1074 |
| بيانات النشر: | Informa UK Limited, 1996. |
| سنة النشر: | 1996 |
| مصطلحات موضوعية: | Materials science, Silicon, business.industry, chemistry.chemical_element, Heterojunction, Surfaces and Interfaces, General Chemistry, Surface finish, Surfaces, Coatings and Films, Characterization (materials science), Contact angle, Root mean square, Semiconductor, Optics, Planar, chemistry, Mechanics of Materials, Materials Chemistry, Optoelectronics, business |
| الوصف: | For the integration of strained Si1-xGex epilayers in future silicon technologies it is necessary to obtain flat planar interfaces. Thus, a good understanding of the growth mechanism and a good knowledge of the properties of this strained material are required. Many articles have dealt with these problems in the literature. In a previous study, atomic force microscopy (AFM) was used to analyze the morphological modifications in SiGe epilayers grown on Si. The different stages of surface evolution have been determined, particularly the onset of undulations. In this study, we have investigated these surface modifications using the contact angle measurement technique. We observed a correlation between the root mean square (RMS) values of the roughness obtained with AFM and the water contact angle values. We demonstrate that the contact angle measurement technique, taking certain precautions, allows the critical thickness, i.e. the thickness beyond which the undulation pseudo-period increases, to be determine... |
| تدمد: | 1568-5616 0169-4243 |
| DOI: | 10.1163/156856196x00102 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::802695e9675bd0dac34230a6239956e9 https://doi.org/10.1163/156856196x00102 |
| رقم الانضمام: | edsair.doi...........802695e9675bd0dac34230a6239956e9 |
| قاعدة البيانات: | OpenAIRE |
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