(Invited) Ultrawide Bandgap β-Ga2O3Thin Films: Growths, Properties and Devices
| العنوان: | (Invited) Ultrawide Bandgap β-Ga2O3Thin Films: Growths, Properties and Devices |
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| المؤلفون: | Hongping Zhao, Subrina Rafique, Lu Han |
| المصدر: | ECS Transactions. 80:203-216 |
| بيانات النشر: | The Electrochemical Society, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Wavelength, Quality (physics), Materials science, business.industry, Band gap, Doping, Wide-bandgap semiconductor, Optoelectronics, Thermal stability, Thin film, business, Monoclinic crystal system |
| الوصف: | Ultrawide bandgap β-Ga2O3 represents an emerging semiconducting material for high power electronics and short wavelength optoelectronics applications. It possesses a wide band gap of 4.5-4.9 eV, and excellent chemical and thermal stability up to 1400 oC, which opens up new opportunities for various device applications. This paper reviews recent progresses on β-Ga2O3 thin film growths, properties and device demonstrations. Methods that have been demonstrated to enable high quality β-Ga2O3 thin film growth with controllable doping are discussed. Device applications of monoclinic β-Ga2O3 are also covered. Finally, a conclusion and future perspectives of the research in the area of this important semiconducting material will be given. |
| تدمد: | 1938-5862 1938-6737 |
| DOI: | 10.1149/08007.0203ecst |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::7f3d2f436131df37794557f32aeb26f1 https://doi.org/10.1149/08007.0203ecst |
| رقم الانضمام: | edsair.doi...........7f3d2f436131df37794557f32aeb26f1 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19385862 19386737 |
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| DOI: | 10.1149/08007.0203ecst |