Shallow junctions by high‐dose As implants in Si: experiments and modeling
| العنوان: | Shallow junctions by high‐dose As implants in Si: experiments and modeling |
|---|---|
| المؤلفون: | M. Y. Tsai, F. F. Morehead, A. E. Michel, J. E. E. Baglin |
| المصدر: | Journal of Applied Physics. 51:3230-3235 |
| بيانات النشر: | AIP Publishing, 1980. |
| سنة النشر: | 1980 |
| مصطلحات موضوعية: | Ion implantation, Materials science, Silicon, chemistry, Annealing (metallurgy), Electrical resistivity and conductivity, Kinetics, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Charge carrier, Conductivity, Moderate temperature |
| الوصف: | Shallow ( |
| تدمد: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.328078 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::7bde9ebd8b6407b653e2903ca6b46938 https://doi.org/10.1063/1.328078 |
| رقم الانضمام: | edsair.doi...........7bde9ebd8b6407b653e2903ca6b46938 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10897550 00218979 |
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| DOI: | 10.1063/1.328078 |