Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films During Low Temperature Annealing
| العنوان: | Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films During Low Temperature Annealing |
|---|---|
| المؤلفون: | S. Nagao, H. Tokioka, Y. Goto, Hiroshi Kurokawa, Y. Masutani |
| المصدر: | MRS Proceedings. 403 |
| بيانات النشر: | Springer Science and Business Media LLC, 1995. |
| سنة النشر: | 1995 |
| مصطلحات موضوعية: | Ion implantation, Materials science, Annealing (metallurgy), Ellipsometry, Analytical chemistry, Recrystallization (metallurgy), Surface layer, Thin film, Sheet resistance, Ion |
| الوصف: | During low temperature (below 450°C) annealing, the sheet resistance of phosphorus implanted poly-Si thin films (film thickness : 50nm) decreased to lE+3Ω/square. The sheet resistance after annealing decreased with annealing time and became lower when the dosing level was high enough. At the dose of 8E+14 ions/cm2 we obtained a sheet resistance of 1E+3Q/square by annealing at 450°C for 180min. We analyzed ellipsometry data assuming a two-layer model where the surface layer consists of a-Si and the lower layer of poly-Si. This analysis indicated that the surface of implanted films was amorphized by ion implantation and the amorphized layer thickness increased with dosing level. Also, it turned out that the lower poly-Si layer thickness increased from 30nm to 50nm after annealing accompanied by the conversion of a-Si layer to poly-Si layer. During annealing at low temperature, activation of phosphorus ions implanted into poly-Si and recrystallization of a-Si took place simultaneously and the sheet resistance after annealing decreased with the increase in thickness of the recrystallized region. |
| تدمد: | 1946-4274 0272-9172 |
| DOI: | 10.1557/proc-403-405 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::7b82c4c38eeb5a9feafcb40a5ca1b199 https://doi.org/10.1557/proc-403-405 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........7b82c4c38eeb5a9feafcb40a5ca1b199 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19464274 02729172 |
|---|---|
| DOI: | 10.1557/proc-403-405 |