A Novel PIN Switch Diode Integrating with 0.18um SiGe HBT BiCMOS Process
| العنوان: | A Novel PIN Switch Diode Integrating with 0.18um SiGe HBT BiCMOS Process |
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| المؤلفون: | Pan Jia, Jing Shi, Donghua Liu, Jun Hu, Sheng'An Xiao, Chen Xi, Wensheng Qian, Xiongbin Chen, Jingfeng Huang, Zhengliang Zhou, Xiangming Xu, Duan Wenting, Fan Chen, TungYuan Chu, Zhou Keran, Tianshu Zhou, Xue Kai |
| المصدر: | ECS Transactions. 44:105-114 |
| بيانات النشر: | The Electrochemical Society, 2012. |
| سنة النشر: | 2012 |
| مصطلحات موضوعية: | Materials science, business.industry, Heterojunction bipolar transistor, Bicmos process, Electronic engineering, Optoelectronics, business, Diode |
| الوصف: | A novel structure PIN switch diode which is integrated into SiGe HBT BiCMOS process was reported in this paper reports. In this PIN device, an n-type pseudo buried layer (PBL) under STI is adopted as N region and the heavily doped extrinsic base of SiGe NPN HBT is used as P region. The pseudo buried layer is picked up by a deep contact through field oxide. An extra implantation (PIN implantation) is induced into I region. Key parameters such as the size of active area, space from PBL to active area and energy & dose of PIN implant are obtained by simulation for PIN performance optimization. The demonstrated performance of this PIN diode exhibits an insertion loss as -0.56dB & an isolation loss as -22.26dB under 2.4Ghz frequency, and the BV can achieve 19V, which meets the requirement of PIN diode applied as switch in WiFi. |
| تدمد: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.3694303 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::7a4476994a17e082b4b0dfad5dd6789d https://doi.org/10.1149/1.3694303 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........7a4476994a17e082b4b0dfad5dd6789d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19386737 19385862 |
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| DOI: | 10.1149/1.3694303 |