التفاصيل البيبلوغرافية
| العنوان: |
Hole Trap Associated with High Background Doping in P-type GaAsN Grown by Chemical Beam Epitaxy |
| المؤلفون: |
Yoshio Ohshita, M. Yamaguchi, Omar Elleuch, L. Wang, K. Ikeda, N. Kojima, Koshiro Demizu |
| المصدر: |
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials. |
| بيانات النشر: |
The Japan Society of Applied Physics, 2014. |
| سنة النشر: |
2014 |
| مصطلحات موضوعية: |
Trap (computing), Materials science, business.industry, Doping, Optoelectronics, business, Chemical beam epitaxy |
| DOI: |
10.7567/ssdm.2014.g-4-2 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::742fe0c8ec262e0249fd31ce91f84698
https://doi.org/10.7567/ssdm.2014.g-4-2 |
| رقم الانضمام: |
edsair.doi...........742fe0c8ec262e0249fd31ce91f84698 |
| قاعدة البيانات: |
OpenAIRE |