A High-Temperature Model for GaN-HEMT Transistors and its Application to Resistive Mixer Design
| العنوان: | A High-Temperature Model for GaN-HEMT Transistors and its Application to Resistive Mixer Design |
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| المؤلفون: | Fariborz Lohrabi Pour, Jebreel M. Salem, Dong Sam Ha Life |
| المصدر: | IEEE Transactions on Circuits and Systems I: Regular Papers. 68:581-591 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Resistive touchscreen, Materials science, business.industry, Local oscillator, Transistor, Gallium nitride, Biasing, High-electron-mobility transistor, Temperature measurement, law.invention, chemistry.chemical_compound, chemistry, law, Silicon carbide, Optoelectronics, Electrical and Electronic Engineering, business |
| الوصف: | This article presents a high temperature model for gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC). The proposed model for the channel resistance $\text {R}_{\text {ds}}$ is based on an empirical nonlinear model. The model is applied to design a resistive mixer of a high temperature transceiver for downhole communications through a systematic approach and estimate the performance of the mixer. The proposed model matches well with measurement results of the mixer and accurately estimates its performance at temperatures up to 250 °C. The model is also applied to obtain the optimal gate bias voltage of the mixer for a given temperature. The optimal bias voltage scheme reduces the conversion loss of the mixer by a factor of 8.4 dB at 250 °C under the local oscillator power of −10 dBm. |
| تدمد: | 1558-0806 1549-8328 |
| DOI: | 10.1109/tcsi.2020.3039907 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::73b028f9bf178b1e494c3696a7fa6bd5 https://doi.org/10.1109/tcsi.2020.3039907 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........73b028f9bf178b1e494c3696a7fa6bd5 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580806 15498328 |
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| DOI: | 10.1109/tcsi.2020.3039907 |